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Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177
Figure 1: Schematic of the investigated DG-HJ-JL TFET with Nd = 1·1019 cm−3 and tox = 3 nm.
Figure 2: Drain current as a function of the applied gate voltage for the DG-HJ-JL TFET proposed with differe...
Figure 3: (a) Transfer characteristics of the proposed Si1−xGex/Si/Ge DG-HJ-JL TFET as a function of the Ge c...
Figure 4: (a) Subthreshold swing factor and the ION/IOFF ratio as functions of the Ge mole fraction for the i...
Figure 5: Subthreshold swing factor as a function of the channel length for both the proposed Si1−xGex/Si/Ge ...